Computing with volatile memristors: an application of non-pinched hysteresis

The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated theoretically. We have adopted a hysteretic graphene-based field emission structure as a prototype of a volatile memristor, which is character...

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Bibliographic Details
Published in:	Nanotechnology 2017-02, Vol.28 (7), p.075204-075204
Main Authors:	Pershin, Y V, Shevchenko, S N
Format:	Article
Language:	eng
Subjects:	field emission graphene in-memory computing material implication memristor
Online Access:	Get full text
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Summary:	The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated theoretically. We have adopted a hysteretic graphene-based field emission structure as a prototype of a volatile memristor, which is characterized by a non-pinched hysteresis loop. A memristive model of the structure is developed and used to simulate a polymorphic circuit implementing stateful logic gates, such as the material implication. Specific regions of parameter space realizing useful logic functions are identified. Our results are applicable to other realizations of volatile memory devices, such as certain NEMS switches.
ISSN:	0957-4484 1361-6528