A simultaneous deep micromachining and surface passivation method suitable for silicon-based devices

Three novel methods for simultaneous micromachining and surface passivation of silicon are reported. A thin passivation layer is achieved using continuous and sequential plasma processes based on SF6, H2 and O2 gases. Reducing the recombination by surface passivation is crucial for the realization o...

Full description

Saved in:
Bibliographic Details
Published in:Journal of micromechanics and microengineering 2018-07, Vol.28 (7), p.75003
Main Authors: Babaei, E, Gharooni, M, Mohajerzadeh, S, Soleimani, E A
Format: Article
Language:English
Subjects:
energy devices
micromachining
silicon
solar cell
surface passivation
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Three novel methods for simultaneous micromachining and surface passivation of silicon are reported. A thin passivation layer is achieved using continuous and sequential plasma processes based on SF6, H2 and O2 gases. Reducing the recombination by surface passivation is crucial for the realization of high-performance nanosized optoelectronic devices. The passivation of the surface as an important step, is feasible by plasma processing based on hydrogen pulses in proper time-slots or using a mixture of H2 and O2, and SF6 gases. The passivation layer which is formed in situ during the micromachining process obviates a separate passivation step needed in conventional methods. By adjusting the plasma parameters such as power, duration, and flows of gases, the process can be controlled for the best results and acceptable under-etching at the same time. Moreover, the pseudo-oxide layer which is formed during the micromachining processes will also improve the electrical characteristics of the surface, which can be used as an add-on for micro and nanowire applications. To quantify the effect of surface passivation in our method, ellipsometry, lifetime measurements, x-ray photoelectron spectroscopy, current-voltage and capacitance-voltage measurements and solar cell testing have been employed.
ISSN:0960-1317
1361-6439
DOI:10.1088/1361-6439/aab6bc