Analyses of delta-doped emitter bipolar transistor

In this article, the theoretical model of delta-doped emitter bipolar transistor that included the effect of bandgap shrinkage is presented. The recombination in emitter set-back layer is also considered. We also present the calculated results for the current gain as a function of barrier height, ba...

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Bibliographic Details
Published in:International journal of electronics 2005-12, Vol.92 (12), p.729-741
Main Authors: Yarn, K. F., Lew, K. L., Wang, Y. H., Houng, M. P.
Format: Article
Language:English
Subjects:
Applied sciences
Delta-doped
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Set-back layer
Thermionic-emission
Transistors
Tunneling
WKB approximation
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Summary:In this article, the theoretical model of delta-doped emitter bipolar transistor that included the effect of bandgap shrinkage is presented. The recombination in emitter set-back layer is also considered. We also present the calculated results for the current gain as a function of barrier height, barrier width, and emitter set-back layer thickness. The experimental results of the device are also given.
ISSN:0020-7217
1362-3060
DOI:10.1080/08827510410001694842