Storage time of saturated transistors

A method is described by which the base current resulting from turning off a saturated transistor by a generator of low source impedance can be calculated; this leads to a determination of the storage time as a function of the transistor's working parameters. The equations derived are useful fo...

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Bibliographic Details
Published in:International journal of electronics 1973-03, Vol.34 (3), p.289-304
Main Authors: SCHÄR, FRITZ, BALDINGER, ERNST
Format: Article
Language:English
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Summary:A method is described by which the base current resulting from turning off a saturated transistor by a generator of low source impedance can be calculated; this leads to a determination of the storage time as a function of the transistor's working parameters. The equations derived are useful for optimizing saturated transistor-turnoff.
ISSN:0020-7217
1362-3060
DOI:10.1080/00207217308938443