Origin of Porosity in Triol Sol-Gel PbZr 53 Ti 47 O 3 Single Layer Thin Films Deposited on Pt/Ti/SiO 2 /Si Substrates

Pb(Zr 53 Ti 47 )O 3 thin films on Pt/Ti/SiO 2 /Si substrates were processed by a triol (1,1,1-tris(hydroxymethyl)ethane) based sol-gel route. Film microstructures were characterised using transmission electron microscope (TEM) equipped with electron energy loss spectroscopy and nano-probe energy dis...

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Bibliographic Details
Published in:Ferroelectrics 2002-01, Vol.271 (1), p.353-358
Main Authors: Zhou, Z., Reaney, I. M., Hind, D., Milne, S. J.
Format: Article
Language:eng
Subjects:
Tem
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Summary:Pb(Zr 53 Ti 47 )O 3 thin films on Pt/Ti/SiO 2 /Si substrates were processed by a triol (1,1,1-tris(hydroxymethyl)ethane) based sol-gel route. Film microstructures were characterised using transmission electron microscope (TEM) equipped with electron energy loss spectroscopy and nano-probe energy dispersive X-ray analysis with the intention of revealing the crystallisation mechanism. Porosity developed in films >75nm, whereas films h 75nm thick were single phase and pore free. An investigation of low temperature heat treatment schedule on phase evolution was carried out to elucidate the origin of the porosity in films >75nm. TEM results indicated that porosity was associated with the formation of Pb-rich precipitates during low temperature pyrolysis (∼400°C). Inhomogeneity of the pyrolysed microstructure is responsible for inhomogeneity in the crystallised film >75nm.
ISSN:0015-0193
1563-5112