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Highly solar-blind ultraviolet selective metal-semiconductor-metal photodetector based on back-illuminated AlGaN heterostructure with integrated photonic crystal filter
In this paper, we proposed a back-illuminated metal-semiconductor-metal AlGaN heterostructure solar-blind ultraviolet (UV) photodetector integrated with a SiO2/Si3N4 one-dimensional photonic crystal (1D PC). The light absorption outside solar-blind ultraviolet caused by impurity and defect energy le...
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Published in: | Applied physics letters 2021-04, Vol.118 (14) |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this paper, we proposed a back-illuminated metal-semiconductor-metal AlGaN heterostructure solar-blind ultraviolet (UV) photodetector integrated with a SiO2/Si3N4 one-dimensional photonic crystal (1D PC). The light absorption outside solar-blind ultraviolet caused by impurity and defect energy levels is significantly suppressed by the 1D PC. The fabricated device exhibits extremely low dark current of 2 pA at 20 V applied voltage, where light/dark current ratio exceeds 4000. Meanwhile, the photodetector demonstrates a manifest narrow-band solar-blind detection property. The optical modulations of heterostructure energy-band engineering and photonic crystal filter both contribute to the solar-blind absorbing selectivity. In addition, the finger-scaling effects are also investigated based on carrier transport mechanism. These results are anticipated to promote the evolution on design and fabrication of solar-blind UV photodetector. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/5.0045661 |