Highly solar-blind ultraviolet selective metal-semiconductor-metal photodetector based on back-illuminated AlGaN heterostructure with integrated photonic crystal filter

In this paper, we proposed a back-illuminated metal-semiconductor-metal AlGaN heterostructure solar-blind ultraviolet (UV) photodetector integrated with a SiO2/Si3N4 one-dimensional photonic crystal (1D PC). The light absorption outside solar-blind ultraviolet caused by impurity and defect energy le...

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Bibliographic Details
Published in:Applied physics letters 2021-04, Vol.118 (14)
Main Authors: Tan, Ruining, Cai, Qing, Wang, Jin, Pan, Danfeng, Li, Zheyang, Chen, Dunjun
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Applied physics
Carrier transport
Crystal filters
Dark current
Electromagnetic absorption
Energy levels
Heterostructures
Optical properties
Photometers
Photonic crystals
Selectivity
Silicon dioxide
Ultraviolet detectors
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Summary:In this paper, we proposed a back-illuminated metal-semiconductor-metal AlGaN heterostructure solar-blind ultraviolet (UV) photodetector integrated with a SiO2/Si3N4 one-dimensional photonic crystal (1D PC). The light absorption outside solar-blind ultraviolet caused by impurity and defect energy levels is significantly suppressed by the 1D PC. The fabricated device exhibits extremely low dark current of 2 pA at 20 V applied voltage, where light/dark current ratio exceeds 4000. Meanwhile, the photodetector demonstrates a manifest narrow-band solar-blind detection property. The optical modulations of heterostructure energy-band engineering and photonic crystal filter both contribute to the solar-blind absorbing selectivity. In addition, the finger-scaling effects are also investigated based on carrier transport mechanism. These results are anticipated to promote the evolution on design and fabrication of solar-blind UV photodetector.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0045661