Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors

We investigate the polarization modulation effect of a single-crystalline BeO layer on AlGaN/GaN high-electron-mobility transistors (HEMTs). The BeO layer with macroscopic polarization on top of the AlGaN barrier layer increases the 2-dimensional electron gas density in the triangular quantum well (...

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Bibliographic Details
Published in:Applied physics letters 2019-09, Vol.115 (10)
Main Authors: Wang, Weijie, Lee, Seung Min, Pouladi, Sara, Chen, Jie, Shervin, Shahab, Yoon, Seonno, Yum, Jung Hwan, Larsen, Eric S., Bielawski, Christopher W., Chatterjee, Bikramjit, Choi, Sukwon, Oh, Jungwoo, Ryou, Jae-Hyun
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Applied physics
Barrier layers
Carrier density
Conduction bands
Crystal structure
Crystallinity
Current voltage characteristics
Electron gas
Electrons
Gas density
Hall effect
Heterostructures
High electron mobility transistors
Polarization modulation
Quantum wells
Semiconductor devices
Single crystals
Thin films
Transistors
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Summary:We investigate the polarization modulation effect of a single-crystalline BeO layer on AlGaN/GaN high-electron-mobility transistors (HEMTs). The BeO layer with macroscopic polarization on top of the AlGaN barrier layer increases the 2-dimensional electron gas density in the triangular quantum well (QW) at the interface of the AlGaN/GaN heterostructure. Electronic band bending of BeO and a deeper triangular QW observed from the simulated conduction band profile indicate that the BeO layer can modify the polarization field at the AlGaN/GaN interface. A ∼20-nm-thick single-crystalline BeO thin film is grown on AlGaN/GaN HEMTs by atomic-layer deposition. Room-temperature and variable-temperature Hall-effect measurements confirm that the HEMT with BeO forms a channel with a 14% increase of the sheet carrier concentration as compared with a conventional HEMT. An improved output performance is also observed in the I-V characteristics which confirms the polarization modulation effect of the BeO layer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5108832