Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction

This work demonstrates the construction of p-n heterojunctions between mechanically exfoliated beta-phase gallium oxide (β-Ga2O3) and p-GaN. The detailed mechanical exfoliation process was developed and can be used for further device applications. The atomic force microscopy study showed that the ex...

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Bibliographic Details
Published in:Applied physics letters 2019-04, Vol.114 (16)
Main Authors: Montes, Jossue, Yang, Chen, Fu, Houqiang, Yang, Tsung-Han, Fu, Kai, Chen, Hong, Zhou, Jingan, Huang, Xuanqi, Zhao, Yuji
Format: Article
Language:English
Subjects:
Applied physics
Atomic force microscopy
Beta phase
Exfoliation
Gallium nitrides
Gallium oxides
Heterojunctions
Microscopy
P-n junctions
Photonics
Threshold voltage
Transmission electron microscopy
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Summary:This work demonstrates the construction of p-n heterojunctions between mechanically exfoliated beta-phase gallium oxide (β-Ga2O3) and p-GaN. The detailed mechanical exfoliation process was developed and can be used for further device applications. The atomic force microscopy study showed that the exfoliated β-Ga2O3 flakes had a very smooth surface with a roughness of 0.65 nm. Transmission electron microscopy revealed a clearly defined interface between the exfoliated β-Ga2O3 and p-GaN. The p-n heterojunction exhibited a turn-on voltage of 3.6 V and a rectification ratio of ∼105. The heterojunction also showed good thermal performance up to 200 °C. Ideality factors and turn-on voltages decrease with temperature, tending toward the ideal threshold voltage of 3.2 V as determined by Silvaco simulations. This work provides valuable information on a mechanically exfoliated β-Ga2O3/GaN p-n heterojunction, which opens up the opportunities for a variety of photonic and electronic applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5088516