The Aharonov-Bohm oscillation in the BiSbTe3 topological insulator macroflake

We report the Aharonov-Bohm (AB) oscillation in the BiSbTe3 topological insulator macroflake. The magnetoresistance reveals periodic oscillations. The oscillation index number reveals the Berry phase is π which supports the oscillation originates from the surface state. The AB oscillation frequency...

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Bibliographic Details
Published in:Applied physics letters 2018-05, Vol.112 (20)
Main Authors: Huang, Shiu-Ming, Wang, Pin-Chun, Lin, Chien, You, Sheng-Yu, Lin, Wei-Cheng, Lin, Lin-Jie, Yan, You-Jhih, Yu, Shih-Hsun, Chou, M. C.
Format: Article
Language:English
Subjects:
Antimony
Applied physics
Bismuth
Carrier mobility
Coherence length
Magnetoresistance
Magnetoresistivity
Phase coherence
Tellurium
Topological insulators
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Summary:We report the Aharonov-Bohm (AB) oscillation in the BiSbTe3 topological insulator macroflake. The magnetoresistance reveals periodic oscillations. The oscillation index number reveals the Berry phase is π which supports the oscillation originates from the surface state. The AB oscillation frequency increases as temperature decreases, and the corresponding phase coherence length is consistent with that extracted from the weak antilocalization. The phase coherence length is proportional to T−1∕2. The magnetoresistance ratio reaches 700% (1000%) at 9 T (14 T) and 2 K, and it is proportional to the carrier mobility. The magnetoresistance ratio is larger than all reported values in (Bi, Sb)2(Te, Se)3 topological insulators.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5023812