Room temperature operation of quantum cascade lasers monolithically integrated onto a lattice-mismatched substrate

Experimental data for an InP-based 40-stage quantum cascade laser structure grown on a 6-in. GaAs substrate with a metamorphic buffer are reported. The laser structure had an Al0.78In0.22As/In0.73Ga0.27As strain-balanced active region composition and an 8 μm-thick, all-InP waveguide. High reflection...

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Bibliographic Details
Published in:Applied physics letters 2018-01, Vol.112 (3)
Main Authors: Go, R., Krysiak, H., Fetters, M., Figueiredo, P., Suttinger, M., Leshin, J., Fang, X. M., Fastenau, J. M., Lubyshev, D., Liu, A. W. K., Eisenbach, A., Furlong, M. J., Lyakh, A.
Format: Article
Language:English
Subjects:
Active regions (lasers)
Applied physics
Current injection
Lasers
Lasing
Performance degradation
Quantum cascade lasers
Room temperature
Substrates
Temperature dependence
Threshold currents
Wave reflection
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Summary:Experimental data for an InP-based 40-stage quantum cascade laser structure grown on a 6-in. GaAs substrate with a metamorphic buffer are reported. The laser structure had an Al0.78In0.22As/In0.73Ga0.27As strain-balanced active region composition and an 8 μm-thick, all-InP waveguide. High reflection coated 3 mm × 30 μm devices processed from the wafer into a ridge-waveguide configuration with a lateral current injection scheme delivered over 200 mW of total peak power at 78 K with lasing observed up to 170 K. No signs of performance degradation were observed during a preliminary 200-min reliability testing. Temperature dependence for threshold current and slope efficiency in the range from 78 K to 230 K can be described with characteristic temperatures of T0 ≈ 460 K and T1 ≈ 210 K, respectively. Lasing was extended to 303 K by applying a partial high reflection coating to the front facet of the laser.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5012503