High-performance radio frequency transistors based on diameter-separated semiconducting carbon nanotubes

In this paper, we report the high-performance radio-frequency transistors based on the single-walled semiconducting carbon nanotubes with a refined average diameter of ∼1.6 nm. These diameter-separated carbon nanotube transistors show excellent transconductance of 55 μS/μm and desirable drain curren...

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Bibliographic Details
Published in:Applied physics letters 2016-06, Vol.108 (23)
Main Authors: Cao, Yu, Che, Yuchi, Seo, Jung-Woo T., Gui, Hui, Hersam, Mark C., Zhou, Chongwu
Format: Article
Language:English
Subjects:
Applied physics
Carbon
CARBON NANOTUBES
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CURRENTS
DISTRIBUTION
GAIN
GHZ RANGE
METRICS
Nanotubes
Power gain
Radio frequency
RADIOWAVE RADIATION
Semiconductor devices
Single wall carbon nanotubes
Thin film transistors
THIN FILMS
Transconductance
TRANSISTORS
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Summary:In this paper, we report the high-performance radio-frequency transistors based on the single-walled semiconducting carbon nanotubes with a refined average diameter of ∼1.6 nm. These diameter-separated carbon nanotube transistors show excellent transconductance of 55 μS/μm and desirable drain current saturation with an output resistance of ∼100 KΩ μm. An exceptional radio-frequency performance is also achieved with current gain and power gain cut-off frequencies of 23 GHz and 20 GHz (extrinsic) and 65 GHz and 35 GHz (intrinsic), respectively. These radio-frequency metrics are among the highest reported for the carbon nanotube thin-film transistors. This study provides demonstration of radio frequency transistors based on carbon nanotubes with tailored diameter distributions, which will guide the future application of carbon nanotubes in radio-frequency electronics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4953074