Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

The growth of Shockley type stacking faults in p-i-n diodes fabricated on the C-face of 4H-SiC during forward current operation was investigated using Berg-Barrett X-ray topography and photoluminescence imaging. After forward current experiment, Shockley type stacking faults were generated from very...

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Bibliographic Details
Published in:Journal of applied physics 2016-03, Vol.119 (9)
Main Authors: Tanaka, Atsushi, Matsuhata, Hirofumi, Kawabata, Naoyuki, Mori, Daisuke, Inoue, Kei, Ryo, Mina, Fujimoto, Takumi, Tawara, Takeshi, Miyazato, Masaki, Miyajima, Masaaki, Fukuda, Kenji, Ohtsuki, Akihiro, Kato, Tomohisa, Tsuchida, Hidekazu, Yonezawa, Yoshiyuki, Kimoto, Tsunenobu
Format: Article
Language:English
Subjects:
Applied physics
Basal plane
Berg Barrett method
Edge dislocations
Epitaxial growth
Photoluminescence
PIN diodes
Stacking faults
Substrates
X ray topography
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Summary:The growth of Shockley type stacking faults in p-i-n diodes fabricated on the C-face of 4H-SiC during forward current operation was investigated using Berg-Barrett X-ray topography and photoluminescence imaging. After forward current experiment, Shockley type stacking faults were generated from very short portions of basal plane dislocations lower than the conversion points to threading edge dislocations in the epitaxial layer. The growth behavior of Shockley type stacking faults was discussed. Growth of stacking faults in the substrates was not observed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4943165