Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer

The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer b...

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Bibliographic Details
Published in:Applied physics letters 2013-03, Vol.102 (11)
Main Authors: Eun Lee, Jeong, Sharma, Bhupendra K., Lee, Seoung-Ki, Jeon, Haseok, Hee Hong, Byung, Lee, Hoo-Jeong, Ahn, Jong-Hyun
Format: Article
Language:English
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Summary:The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4796174