Effect of nitrogen on the band structure of GaInNAs alloys

Effect of nitrogen on the band structure of GaInNAs alloys

We show that incorporation of nitrogen in Ga1−xInxAs to form Ga1−xInxNyAs1−y alloys leads to a splitting of the conduction band into two nonparabolic subbands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended c...

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Bibliographic Details
Published in:Journal of applied physics 1999-08, Vol.86 (4), p.2349-2351
Main Authors: Shan, W., Walukiewicz, W., Ager, J. W., Haller, E. E., Geisz, J. F., Friedman, D. J., Olson, J. M., Kurtz, Sarah R.
Format: Article
Language:eng
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Summary:We show that incorporation of nitrogen in Ga1−xInxAs to form Ga1−xInxNyAs1−y alloys leads to a splitting of the conduction band into two nonparabolic subbands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lower subband edge accounts for the N-induced reduction of the fundamental band-gap energy. An analysis of the relationship between the subband splitting and the band-gap reduction demonstrates that the energetic location of the valence band is nearly independent of the N content in Ga1−xInxNyAs1−y alloys.
ISSN:0021-8979
1089-7550