Effect of hydrogen on the chemical bonding and band structure at the Al2O3/In0.53Ga0.47As interface

Surface passivation of high mobility semiconductors such as InGaAs is a crucial bottleneck towards their integration in metal-oxide-semiconductor devices. The chemical structure and band offsets of InGaAs-Al2O3 with different passivations were investigated by x-ray photoelectron spectroscopy. Pre-de...

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Bibliographic Details
Published in:Applied physics letters 2011-12, Vol.99 (23)
Main Authors: Shekhter, Pini, Kornblum, Lior, Liu, Zuoguang, Cui, Sharon, Ma, T. P., Eizenberg, Moshe
Format: Article
Language:English
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Summary:Surface passivation of high mobility semiconductors such as InGaAs is a crucial bottleneck towards their integration in metal-oxide-semiconductor devices. The chemical structure and band offsets of InGaAs-Al2O3 with different passivations were investigated by x-ray photoelectron spectroscopy. Pre-deposition forming gas plasma treatment is shown to significantly improve the chemistry of S-passivated InGaAs surface, on which the Al2O3 is deposited by the molecular atomic deposition technique. Moreover, the change in the surface chemistry was found to correlate with a difference of 0.8 eV in the band offsets at the interface. This may offer insights on Fermi level pinning in such systems.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3664778