Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide

We have deposited epitaxial diamond films with very low angular spread on epitaxial β-phase silicon carbide layers on silicon (001) substrates. From x-ray rocking curve measurements, half-widths of the angular spread of the crystal orientation as low as 0.6° have been determined, which is the smalle...

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Bibliographic Details
Published in:Journal of applied physics 1997-04, Vol.81 (8), p.3490-3493
Main Authors: Kawarada, H., Wild, C., Herres, N., Locher, R., Koidl, P., Nagasawa, H.
Format: Article
Language:English
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Summary:We have deposited epitaxial diamond films with very low angular spread on epitaxial β-phase silicon carbide layers on silicon (001) substrates. From x-ray rocking curve measurements, half-widths of the angular spread of the crystal orientation as low as 0.6° have been determined, which is the smallest value ever reported in heteroepitaxial diamond films and appears to be smaller than those of the β-phase silicon carbide underlayers. The film surface exhibits a roughness of about 100 nm with very few discernible boundaries due to misorientation. The optimization of the bias-enhanced nucleation process and the control of selective growth are the main factors for the improvement of the crystallinity.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.365047