Influence of free carrier concentration on absorption and third-order susceptibilities of n -type ZnSe crystals

This study analyzes the dependence of third-order susceptibilities at 532 nm of n-type ZnSe crystals in relation to free carrier concentration and annealing temperatures. The nonlinear optical absorption and the efficiency of degenerate four-wave mixing of ZnSe are investigated. We find that the mag...

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Bibliographic Details
Published in:Journal of applied physics 1996-11, Vol.80 (9), p.4854-4858
Main Authors: Sahraoui, B., Chevalier, R., Phu, X. Nguyen, Rivoire, G., Bala, W.
Format: Article
Language:English
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Summary:This study analyzes the dependence of third-order susceptibilities at 532 nm of n-type ZnSe crystals in relation to free carrier concentration and annealing temperatures. The nonlinear optical absorption and the efficiency of degenerate four-wave mixing of ZnSe are investigated. We find that the magnitude of the nonlinear absorption decreases with the electron concentration and annealing temperature increase, while the nonlinear refractive index increases slightly.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.363527