Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy

We have investigated the electronic structure of GaInN semiconductors by performing x-ray absorption near-edge fine structure (XANES) spectroscopy at Ga K -edge and self-consistent-field real-space multiple-scattering theory calculations. It was demonstrated that the nondestructive Ga K -edge XANES...

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Bibliographic Details
Published in:Applied physics letters 2011-05, Vol.98 (18), p.181901-181901-3
Main Authors: Guo, Q. X., Senda, H., Saito, K., Tanaka, T., Nishio, M., Ding, J., Fan, T. X., Zhang, D., Wang, X. Q., Liu, S. T., Shen, B., Ohtani, R.
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Language:English
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Summary:We have investigated the electronic structure of GaInN semiconductors by performing x-ray absorption near-edge fine structure (XANES) spectroscopy at Ga K -edge and self-consistent-field real-space multiple-scattering theory calculations. It was demonstrated that the nondestructive Ga K -edge XANES spectra can be used as the fingerprints of structure and composition for GaInN. The theoretical calculations gave a reasonable reproduction of the experimental spectral features. The results revealed that the combination of the experimental XANES and the theoretical calculations is a powerful tool for studying the electronic structure of GaInN semiconductors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3583461