RESIDUAL DONOR AND ACCEPTOR INCORPORATION IN INP GROWN USING TRIMETHYLINDIUM AND TERTIARYBUTYLPHOSPHINE

Residual donor and acceptor species were studied in a series of high purity n-type InP epilayers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine and trimethylindium (TMIn). Over the entire range of growth conditions, the residual donors were found to be S and Si using ma...

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Bibliographic Details
Published in:Journal of applied physics 1992-10, Vol.72 (7), p.2797-2801
Main Authors: WATKINS, SP, NISSEN, MK, HAACKE, G, HANDLER, EM
Format: Article
Language:English
Subjects:
Physical Sciences
Physics
Physics, Applied
Science & Technology
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Summary:Residual donor and acceptor species were studied in a series of high purity n-type InP epilayers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine and trimethylindium (TMIn). Over the entire range of growth conditions, the residual donors were found to be S and Si using magnetophotoluminescence spectroscopy. These designations agreed with the observed dependence of the transport data on growth conditions. Residual levels of Zn and Mg or Be acceptors were identified by photoluminescence (PL) measurements at low excitation powers. C acceptors were below the limits of detection by PL, as in other studies using phosphine and TMIn.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.352344