The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor

This study examined the effect of gate dielectric materials on the light-induced bias instability of Hf-In-Zn-O (HIZO) transistor. The HfO x and SiN x gated devices suffered from a huge negative threshold voltage ( V th ) shift ( > 11   V ) during the application of negative-bias-thermal illumina...

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Bibliographic Details
Published in:Applied physics letters 2010-11, Vol.97 (18), p.183503-183503-3
Main Authors: Kwon, Jang-Yeon, Jung, Ji Sim, Son, Kyoung Seok, Lee, Kwang-Hee, Park, Joon Seok, Kim, Tae Sang, Park, Jin-Seong, Choi, Rino, Jeong, Jae Kyeong, Koo, Bonwon, Lee, Sang Yoon
Format: Article
Language:English
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Summary:This study examined the effect of gate dielectric materials on the light-induced bias instability of Hf-In-Zn-O (HIZO) transistor. The HfO x and SiN x gated devices suffered from a huge negative threshold voltage ( V th ) shift ( > 11   V ) during the application of negative-bias-thermal illumination stress for 3 h. In contrast, the HIZO transistor exhibited much better stability ( < 2.0   V ) in terms of V th movement under identical stress conditions. Based on the experimental results, we propose a plausible degradation model for the trapping of the photocreated hole carrier either at the channel/gate dielectric or dielectric bulk layer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3513400