Enhancement of light power for strain-compensated hybrid InGaN/InGaN/MgZnO light-emitting diodes

Electronic and optical properties of strain-compensated InGaN/InGaN/MgZnO quantum well (QW) structures using a MgZnO substrate are investigated using the multiband effective mass theory. A strain-compensated InGaN/InGaN/MgZnO QW structure with a larger strain shows larger matrix element than that wi...

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Bibliographic Details
Published in:Applied physics letters 2010-09, Vol.97 (12)
Main Authors: Park, Seoung-Hwan, Moon, Yong-Tae, Lee, Jeong Sik, Kwon, Ho Ki, Park, Joong Seo, Ahn, Doyeol
Format: Article
Language:English
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Summary:Electronic and optical properties of strain-compensated InGaN/InGaN/MgZnO quantum well (QW) structures using a MgZnO substrate are investigated using the multiband effective mass theory. A strain-compensated InGaN/InGaN/MgZnO QW structure with a larger strain shows larger matrix element than that with a smaller strain. The spontaneous emission peak rapidly increases with increasing compressive strain because the matrix element is enhanced for the strain-compensated QW structure with a larger strain. In addition, we find that the strain-compensated QW structure with the larger Mg composition in the substrate has greater spontaneous emission peak than the strain-compensated QW structure with the smaller Mg composition in the substrate.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3493648