Nanostructures in p-GaAs with improved tunability

A nanofabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is provided by the complementary electrostatic effects of intrinsi...

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Bibliographic Details
Published in:Applied physics letters 2010-07, Vol.97 (2), p.022110-022110-3
Main Authors: Csontos, M., Komijani, Y., Shorubalko, I., Ensslin, K., Reuter, D., Wieck, A. D.
Format: Article
Language:English
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Summary:A nanofabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is provided by the complementary electrostatic effects of intrinsic in-plane gates and evaporated metallic top-gates. Quantum point contacts fabricated with this technique were tested by electrical conductance spectroscopy.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3463465