Low-temperature GaAs epitaxial growth using electron-cyclotron resonance/metalorganic-molecular-beam epitaxy

A low-temperature GaAs epitaxial growth method called electron-cyclotron resonance molecular-beam epitaxy was newly developed. Triethylgallium (TEGa) and triethylarsine (TEAs) were used as source gases and were introduced without thermal decomposition. The method has the advantage of cleaning the Ga...

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Bibliographic Details
Published in:Journal of applied physics 1988-09, Vol.64 (5), p.2778-2780
Main Authors: TANAKA, Y, KUNITSUGU, Y, SUEMUNE, I, HONDA, Y, KAN, Y, YAMANISHI, M
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vacuum deposition
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Summary:A low-temperature GaAs epitaxial growth method called electron-cyclotron resonance molecular-beam epitaxy was newly developed. Triethylgallium (TEGa) and triethylarsine (TEAs) were used as source gases and were introduced without thermal decomposition. The method has the advantage of cleaning the GaAs substrate at the growth temperature just prior to growth as well as to decompose metalorganics with the hydrogen plasma activated by the cyclotron resonance. The epitaxial GaAs film was successfully grown at a temperature as low as 300 °C. All samples grown at 400 °C exhibited p-type conductivity for (arsine/gallium) ratios between 4 and 13. The p-type carrier concentration was strongly dependent on the (arsine/gallium) ratio and was in the range of 1016 –1019 cm−3 .
ISSN:0021-8979
1089-7550
DOI:10.1063/1.341600