Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure

Low temperature carrier dynamics in the InGaAs/GaAs quantum dot-based tunnel injection structure is studied by the time resolved photoluminescence experiment. We observed strongly modified photoluminescence kinetics between tunnel injection and reference quantum dot structures. Slowing down of the p...

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Bibliographic Details
Published in:Applied physics letters 2010-01, Vol.96 (1), p.011901-011901-3
Main Authors: Syperek, M., Leszczyński, P., Misiewicz, J., Pavelescu, E. M., Gilfert, C., Reithmaier, J. P.
Format: Article
Language:English
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Summary:Low temperature carrier dynamics in the InGaAs/GaAs quantum dot-based tunnel injection structure is studied by the time resolved photoluminescence experiment. We observed strongly modified photoluminescence kinetics between tunnel injection and reference quantum dot structures. Slowing down of the photoluminescence rise time in the tunnel injection system under weak and moderate excitation powers, we attributed to a fingerprint of a feeding process of quantum dot states with nonresonant carriers tunneling from the quantum well reservoir. We propose a simple three-level rate equation model to explain qualitatively the observed photoluminescence temporal behavior. Its result shows a good agreement with our experimental data.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3280384