Different resistance switching behaviors of NiO thin films deposited on Pt and SrRuO3 electrodes

We have compared resistance switching of NiO films deposited on Pt and SrRuO3 (SRO): unipolar switching in Pt/NiO/Pt and bipolar switching in Pt/NiO/SRO. Linear fitted current-voltage curves and capacitance-voltage results show that on- and off-states conductions in unipolar switching are dominated...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2009-07, Vol.95 (2)
Main Authors: Choi, J. S., Kim, J.-S., Hwang, I. R., Hong, S. H., Jeon, S. H., Kang, S.-O., Park, B. H., Kim, D. C., Lee, M. J., Seo, S.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have compared resistance switching of NiO films deposited on Pt and SrRuO3 (SRO): unipolar switching in Pt/NiO/Pt and bipolar switching in Pt/NiO/SRO. Linear fitted current-voltage curves and capacitance-voltage results show that on- and off-states conductions in unipolar switching are dominated by inductive Ohmic behavior and Poole–Frenkel effect, respectively. However, the conductions of on- and off-states in bipolar switching follow capacitive Ohmic behavior and Schottky effect, respectively. Therefore, we infer that the mechanisms of the unipolar and bipolar switching behaviors in NiO films are related with changes in bulk-limited filamentary conduction and interfacial Schottky barrier, respectively.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3173813