Metal-ferroelectric-metal capacitor based persistent memory for electronic product code class-1 generation-2 uhf passive radio-frequency identification tag
With the circuits using metal-ferroelectric-metal (MFM) capacitor, rf operational signal properties are almost the same or superior to those of polysilicon-insulator-polysilicon, metal-insulator-metal, and metal-oxide-semiconductor (MOS) capacitors. In electronic product code global class-1 generati...
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| Published in: | Journal of applied physics 2009-03, Vol.105 (6), p.061628-061628-4 |
|---|---|
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | eng |
| Online Access: | Get full text |
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| Summary: | With the circuits using metal-ferroelectric-metal (MFM) capacitor, rf operational signal properties are almost the same or superior to those of polysilicon-insulator-polysilicon, metal-insulator-metal, and metal-oxide-semiconductor (MOS) capacitors. In electronic product code global class-1 generation-2 uhf radio-frequency identification (RFID) protocols, the MFM can play a crucial role in satisfying the specifications of the inventoried flag's persistence times
(
T
pt
)
for each session (S0-S3, SL). In this paper, we propose and design a new MFM capacitor based memory scheme of which persistence time for S1 flag is measured at 2.2 s as well as indefinite for S2, S3, and SL flags during the period of power-on. A ferroelectric random access memory embedded RFID tag chip is fabricated with an industry-standard complementary MOS process. The chip size is around
500
×
500
μ
m
2
and the measured power consumption is about
10
μ
W
. |
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| ISSN: | 0021-8979 1089-7550 |