Angle-resolved photoelectron study on the structures of silicon nitride films and Si3N4/Si interfaces formed using nitrogen-hydrogen radicals

Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen–hydrogen radicals on Si(100), Si(111), and Si(110) are reported. The data were obtained using synchrotron radiation, which allowed the Si 2p, N 1s, and O 1s levels to be investigated with the same probing...

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Bibliographic Details
Published in:Journal of applied physics 2008-12, Vol.104 (11)
Main Authors: Aratani, Takashi, Higuchi, Masaaki, Sugawa, Shigetoshi, Ikenaga, Eiji, Ushio, Jiro, Nohira, Hiroshi, Suwa, Tomoyuki, Teramoto, Akinobu, Ohmi, Tadahiro, Hattori, Takeo
Format: Article
Language:English
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Summary:Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen–hydrogen radicals on Si(100), Si(111), and Si(110) are reported. The data were obtained using synchrotron radiation, which allowed the Si 2p, N 1s, and O 1s levels to be investigated with the same probing depth. The following main results were obtained: (1) the Si3N4 film is covered with one monolayer of Si–(OH)3N. Its areal density is 15% smaller on Si(111) than on Si(100) and Si (110), (2) the Si3N4/Si interfaces on all three surfaces are compositionally abrupt. This conclusion is based on the observation that no Si atoms bonded with three N atoms and one Si atom were detected, and (3) the observation that the number of Si–H bonds at the Si3N4/Si(110) interface is 38%–53% larger than those at the Si3N4/Si(100) and Si3N4/Si(111) interfaces indicates a dependence of the interface structure on the orientation of the substrate.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3002418