High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors

Steady-state Shockley-Read-Hall kinetics is employed to explore the high concentration effect of neutral-potential-well interface traps on the electron-hole recombination direct-current current-voltage (R-DCIV) properties in metal-oxide-silicon field-effect transistors. Extensive calculations includ...

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Bibliographic Details
Published in:Journal of applied physics 2008-11, Vol.104 (9), p.094512-094512-7
Main Authors: Chen, Zuhui, Jie, Bin B, Sah, Chih-Tang
Format: Article
Language:English
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Summary:Steady-state Shockley-Read-Hall kinetics is employed to explore the high concentration effect of neutral-potential-well interface traps on the electron-hole recombination direct-current current-voltage (R-DCIV) properties in metal-oxide-silicon field-effect transistors. Extensive calculations include device parameter variations in neutral-trapping-potential-well electron interface-trap density N ET (charge states 0 and − 1 ), dopant impurity concentration P IM , oxide thickness X ox , forward source/drain junction bias V PN , and transistor temperature T . It shows significant distortion of the R-DCIV lineshape by the high concentrations of the interface traps. The result suggests that the lineshape distortion observed in past experiments, previously attributed to spatial variation in surface impurity concentration and energy distribution of interface traps in the silicon energy gap, can also arise from interface-trap concentration along surface channel region.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2993916