Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks

Electrical data on ZrO2/GeO2 stacks prepared by atomic oxygen beam deposition on Ge at 225 °C reveal a relatively weak dependence of the stack equivalent oxide thickness upon the ZrO2 thickness. This trend points to a very high zirconia dielectric permittivity (k) value which is estimated to be arou...

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Bibliographic Details
Published in:Applied physics letters 2008-08, Vol.93 (8)
Main Authors: Tsipas, P., Volkos, S. N., Sotiropoulos, A., Galata, S. F., Mavrou, G., Tsoutsou, D., Panayiotatos, Y., Dimoulas, A., Marchiori, C., Fompeyrine, J.
Format: Article
Language:English
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Summary:Electrical data on ZrO2/GeO2 stacks prepared by atomic oxygen beam deposition on Ge at 225 °C reveal a relatively weak dependence of the stack equivalent oxide thickness upon the ZrO2 thickness. This trend points to a very high zirconia dielectric permittivity (k) value which is estimated to be around 44. This is indicative of zirconia crystallization into a tetragonal phase which is also supported by x-ray diffraction data. X-ray photoelectron spectroscopy analysis is in line with the assumption that due to a finite GeO2 decomposition, Ge is incorporated into the growing ZrO2, thus, stabilizing the high-k tetragonal phase.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2977555