The role of dislocations as nonradiative recombination centers in InGaN quantum wells

InGaN multiple quantum wells (MQWs) were grown on atomically smooth c - Ga N templates and identical c - Ga N templates etched to reveal hexagonal pits associated with screw dislocations. We found that the room temperature internal quantum efficiency of the MQWs grown on the etched c - Ga N template...

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Bibliographic Details
Published in:Applied physics letters 2008-03, Vol.92 (9), p.091901-091901-3
Main Authors: Abell, Josh, Moustakas, T. D.
Format: Article
Language:English
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Summary:InGaN multiple quantum wells (MQWs) were grown on atomically smooth c - Ga N templates and identical c - Ga N templates etched to reveal hexagonal pits associated with screw dislocations. We found that the room temperature internal quantum efficiency of the MQWs grown on the etched c - Ga N templates is a factor of 2 higher than that of the smooth QWs. This finding is accounted for by the fact that the QWs on the nonplanar surfaces are thinner than the c -plane QWs, and thus the carriers are prevented from reaching the dislocations due to the energy barrier around each defect.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2889444