Band structures of AlAs, GaP, and SiGe alloys: A 30   k × p model

The band structure of indirect-band gap semiconductors (AlAs, GaP) as well as indirect-band gap alloys semiconductors (GeSi) is described theoretically by using a 30 × 30   k × p model including the d far-level contribution. For all materials investigated, the resulting electronic band structure par...

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Bibliographic Details
Published in:Journal of applied physics 2007-09, Vol.102 (5), p.053703-053703-6
Main Authors: Fraj, N., Saïdi, I., Ben Radhia, S., Boujdaria, K.
Format: Article
Language:English
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Summary:The band structure of indirect-band gap semiconductors (AlAs, GaP) as well as indirect-band gap alloys semiconductors (GeSi) is described theoretically by using a 30 × 30   k × p model including the d far-level contribution. For all materials investigated, the resulting electronic band structure parameters are in good agreement with experimental values. The method also provides a good description of the second conduction band which is useful for transport modeling. Finally, our results show that Luttinger parameters, the κ valence band parameter, and the effective masses in the X and L valleys are in good agreement with available experimental data.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2773532