InGaN-light emitting diode with high density truncated hexagonal pyramid shaped p-GaN hillocks on the emission surface

To increase the light extraction efficiency, high density truncated hexagonal pyramid shaped submicron p-GaN hillocks were formed on the emission surface of an InGaN∕GaN multiple quantum well light emitting dicode (LED) using an in situ silicon carbon nitride self-masking layer. The self-assembled h...

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Bibliographic Details
Published in:Applied physics letters 2006-12, Vol.89 (25)
Main Authors: Park, Eun-Hyun, Ferguson, Ian T., Jeon, Soo-Kun, Park, Joong-Seo, Yoo, Tae-Kyung
Format: Article
Language:English
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Summary:To increase the light extraction efficiency, high density truncated hexagonal pyramid shaped submicron p-GaN hillocks were formed on the emission surface of an InGaN∕GaN multiple quantum well light emitting dicode (LED) using an in situ silicon carbon nitride self-masking layer. The self-assembled hillock density was raised up to a low 109cm−2 using several nanometers of a Si0.4C0.6N1 self-masking layer. The self-assembled hillock LED resulted in the optical power improvement up to 80% with similar electrical properties as a normal LED. This device showed a higher electrostatic discharge pass yield at over 1000V reverse stress voltage.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2410229