Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001)

We investigated the influence of additional oxygen supply and temperature during the growth of thin Gd2O3 layers on Si(001) with molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly; however, too high oxygen partial pressures lead to an incr...

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Bibliographic Details
Published in:Applied physics letters 2006-04, Vol.88 (15)
Main Authors: Czernohorsky, M., Bugiel, E., Osten, H. J., Fissel, A., Kirfel, O.
Format: Article
Language:English
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Summary:We investigated the influence of additional oxygen supply and temperature during the growth of thin Gd2O3 layers on Si(001) with molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly; however, too high oxygen partial pressures lead to an increase in the lower permittivity interfacial layer thickness. The growth temperature mainly influences the dielectric gate stack properties due to changes of the Gd2O3∕Si interface structure. Optimized conditions (600°C and pO2=5×10−7mbar) were found to achieve equivalent oxide thickness values below 1nm accompanied by leakage current densities below 1mA∕cm2 at 1V.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2194227