Influence of trap states on dynamic properties of single grain silicon thin film transistors

The transient properties of single grain-thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and a...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2006-04, Vol.88 (15), p.153507-153507-3
Main Authors: Yan, F., Migliorato, P., Ishihara, R.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The transient properties of single grain-thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some SG-TFTs with high field effect mobility is dominated by a single trap level. Bias stressing on SG-TFT can induce more trap states and thus change the ac response of the device.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2193049