Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection

Carrier dynamics in quantum dot p-i-n diodes are studied using an ultrafast polarization-resolved pump-probe technique. It is demonstrated that for bipolar electrical injection there is a high probability of the independent capture of electrons or holes into the dots, resulting in dot charging. Volt...

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Bibliographic Details
Published in:Applied physics letters 2006-03, Vol.88 (11), p.111104-111104-3
Main Authors: Savelyev, A. V., Tartakovskii, A. I., Skolnick, M. S., Mowbray, D. J., Maximov, M. V., Ustinov, V. M., Seisyan, R. P.
Format: Article
Language:English
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Summary:Carrier dynamics in quantum dot p-i-n diodes are studied using an ultrafast polarization-resolved pump-probe technique. It is demonstrated that for bipolar electrical injection there is a high probability of the independent capture of electrons or holes into the dots, resulting in dot charging. Voltage control of the charged exciton population, created via a combination of electrical and optical excitation, which exhibits a long lived spin polarization (or spin memory) is demonstrated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2179371