Dopant source choice for formation of p -type ZnO: Li acceptor

Li-doped, p -type ZnO thin films have been realized via dc reactive magnetron sputtering. An optimized result with a resistivity of 16.4 Ω cm , Hall mobility of 2.65 cm 2 ∕ V s , and hole concentration of 1.44 × 10 17 cm − 3 was achieved, and electrically stable over a month. Hall-effect measurement...

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Bibliographic Details
Published in:Applied physics letters 2006-02, Vol.88 (6), p.062107-062107-3
Main Authors: Zeng, Y. J., Ye, Z. Z., Xu, W. Z., Li, D. Y., Lu, J. G., Zhu, L. P., Zhao, B. H.
Format: Article
Language:English
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Summary:Li-doped, p -type ZnO thin films have been realized via dc reactive magnetron sputtering. An optimized result with a resistivity of 16.4 Ω cm , Hall mobility of 2.65 cm 2 ∕ V s , and hole concentration of 1.44 × 10 17 cm − 3 was achieved, and electrically stable over a month. Hall-effect measurements supported by secondary ion mass spectroscopy indicated that the substrate temperature played a key role in optimizing the p -type conduction of Li-doped ZnO thin films. Furthermore, ZnO-based p - n homojunction was fabricated by deposition of a Li-doped p -type ZnO layer on an Al-doped n -type ZnO layer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2172743