H-induced platelet and crack formation in hydrogenated epitaxial Si∕Si0.98B0.02∕Si structures

An approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxial Si∕Si0.98B0.02∕Si structures grown by molecular-beam epitaxy. H-related defect formation during hy...

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Bibliographic Details
Published in:Applied physics letters 2006-01, Vol.88 (2)
Main Authors: Shao, Lin, Lin, Yuan, Swadener, J. G., Lee, J. K., Jia, Q. X., Wang, Y. Q., Nastasi, M., Thompson, Phillip E., Theodore, N. David, Alford, T. L., Mayer, J. W., Chen, Peng, Lau, S. S.
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Language:English
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Summary:An approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxial Si∕Si0.98B0.02∕Si structures grown by molecular-beam epitaxy. H-related defect formation during hydrogenation was found to be very sensitive to the thickness of the buried Si0.98B0.02 layer. For hydrogenated Si containing a 130nm thick Si0.98B0.02 layer, no platelets or cracking were observed in the B-doped region. Upon reducing the thickness of the buried Si0.98B0.02 layer to 3nm, localized continuous cracking was observed along the interface between the Si and the B-doped layers. In the latter case, the strains at the interface are believed to facilitate the (100)-oriented platelet formation and (100)-oriented crack propagation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2163992