Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors

Lanthanide-incorporated tantalum nitride (TaN) is studied as a potential metal gate candidate for n -channel metal-oxide-semiconductor field-effect transistors ( n -MOSFETs). Lanthanides such as terbium (Tb), erbium (Er), and ytterbium (Yb) are introduced into TaN to form Ta 1 − x Tb x N y , Ta 1 −...

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Published in:Applied physics letters 2005-08, Vol.87 (7), p.073506-073506-3
Main Authors: Ren, C., Chan, D. S. H., Wang, X. P., Faizhal, B. B., Li, M.-F., Yeo, Y.-C., Trigg, A. D., Agarwal, A., Balasubramanian, N., Pan, J. S., Lim, P. C., Huan, A. C. H., Kwong, D.-L.
Format: Article
Language:English
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Summary:Lanthanide-incorporated tantalum nitride (TaN) is studied as a potential metal gate candidate for n -channel metal-oxide-semiconductor field-effect transistors ( n -MOSFETs). Lanthanides such as terbium (Tb), erbium (Er), and ytterbium (Yb) are introduced into TaN to form Ta 1 − x Tb x N y , Ta 1 − x Er x N y , and Ta 1 − x Yb x N y metal gates, respectively, on Si O 2 dielectric. The resistivity, crystallinity, film composition, and work function of Ta 1 − x Tb x N y , Ta 1 − x Er x N y , and Ta 1 − x Yb x N y films were investigated at different post-metal-anneal temperatures and for different lanthanide concentrations. It was found that the work function of lanthanide-incorporated TaN can be effectively tuned by increasing the concentration of lanthanide. Work functions of about 4.2 - 4.3 eV can be achieved even after a 1000 ° C rapid thermal anneal, making lanthanide-incorporated TaN a promising metal gate candidate for n -MOSFETs. The enhanced nitrogen concentration and the possible presence of lanthanide-N or Ta-N-lanthanide compounds in lanthanide-incorporated TaN film could be responsible for its chemical-thermal stability on Si O 2 .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1947901