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Annealing effects on the temperature dependence of photoluminescence characteristics of GaAsSbN single-quantum wells
In this work we investigate the effects of ex situ annealing in N ambient and in situ annealing in As ambient on the temperature dependence of photoluminescence (PL) spectral characteristics of GaAsSbN ∕ GaAs single-quantum-well heterostructures. The focus of this work is on three representative nit...
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Published in: | Journal of applied physics 2005-07, Vol.98 (1), p.013703-013703-6 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this work we investigate the effects of
ex situ
annealing in N ambient and
in situ
annealing in As ambient on the temperature dependence of photoluminescence (PL) spectral characteristics of
GaAsSbN
∕
GaAs
single-quantum-well heterostructures. The focus of this work is on three representative nitride samples grown by molecular-beam epitaxy. The widths of the quantum wells (QWs) varied from 8 to 9 nm and the concentrations of nitrogen and antimony as determined from high-resolution x-ray diffraction and secondary-ion-mass spectroscopy were in the range of 0.8%-1.4% and 26%-33%, respectively. One sample was
ex situ
annealed in N ambient at 700°C for 10 min. Two other samples were
in situ
annealed in As ambient at 650 and 700°C, respectively, also for 10 min. Excitonic transitions in the QWs exhibit the well-known "
S
-curve" behavior in the temperature dependence of the PL peak energy. In addition, the variation of the full width at half maximum with temperature exhibits an "inverted
S
-curve" behavior. These are well-known signatures of localized excitons. The PL characteristics such as total integrated intensity and full width at half maximum as well as their temperature dependence, and the quality x-ray rocking curves clearly indicate that
in situ
annealing is more effective in reducing the densities of the localized states and of nonradiative recombination centers leading to better quality quantum well structures. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.1931032 |