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In situ resistance measurement of the p -type contact in InP-InGaAsP coolerless ridge waveguide lasers
Scanning voltage microscopy (SVM) is employed to measure the voltage division-and resulting contact resistance and power loss-at the p - In 0.53 Ga 0.47 As - p - InP heterojunction in a working InP-InGaAsP laser diode. This heterojunction is observed to dissipate ∼ 35 % of the total power applied to...
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Published in: | Applied physics letters 2005-02, Vol.86 (8), p.081111-081111-3 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Scanning voltage microscopy (SVM) is employed to measure the voltage division-and resulting contact resistance and power loss-at the
p
-
In
0.53
Ga
0.47
As
-
p
-
InP
heterojunction in a working InP-InGaAsP laser diode. This heterojunction is observed to dissipate
∼
35
%
of the total power applied to the laser over the operating bias range. This
in situ
experimental study of the parasitic voltage division (and resulting power loss and series contact resistance) highlights the need for a good
p
-type contact strategy. SVM technique provides a direct, fast and
in situ
measurement of specific contact resistance, an important device parameter. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1869541 |