Observation of photoluminescence related to Lomer-Cottrell-like dislocations in ZnSe epilayers grown on in situ cleaved (110)GaAs surfaces

We have performed microphotoluminescence (μ-PL) experiments on ZnSe epilayers grown by molecular beam epitaxy on (110)GaAs surfaces cleaved in situ . The experiments revealed a dislocation-related PL emission at 2.72 eV (henceforth referred to as Z 0 ), which is distinctly different from the Y 0 exc...

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Published in:Journal of applied physics 2005-01, Vol.97 (1), p.013519-013519-9
Main Authors: Kutrowski, M., Wojtowicz, T., Cywinski, G., Titova, L. V., Martin, E., Liu, X., Furdyna, J. K., Dobrowolska, M.
Format: Article
Language:English
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Summary:We have performed microphotoluminescence (μ-PL) experiments on ZnSe epilayers grown by molecular beam epitaxy on (110)GaAs surfaces cleaved in situ . The experiments revealed a dislocation-related PL emission at 2.72 eV (henceforth referred to as Z 0 ), which is distinctly different from the Y 0 exciton line commonly observed in ZnSe, although it shows many characteristics similar to the Y 0 emission (such as fine structure, linear polarization, and phonon replicas). Both the Z 0 and the Y 0 emissions are clearly seen under the microscope in the form of long, narrow blue streaks oriented along the [−110] direction. The Z 0 line is strongly linearly polarized in the direction perpendicular to [−110] (i.e., along [001]) and shows an unusually small Huang-Rhys factor, S = 0.13 . Using the concept of a dislocation exciton, we interpret the Z 0 line as the recombination of an exciton bound to a dislocation whose Burgers vector is reminiscent of the Lomer-Cottrell dislocation, and differs from that responsible for the Y 0 emission.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1827914