Characterization of breakdown in ultrathin oxides by hot carrier emission

Hot carrier luminescence excited at low voltages across ultrathin gate oxides is used to describe the localized transport during progressive oxide breakdown. The emission identifies the locations of initial breakdown spots in field effect transistors. The transitions from stress-induced leakage curr...

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Bibliographic Details
Published in:Applied physics letters 2004-06, Vol.84 (23), p.4641-4643
Main Authors: Tsang, J. C., Linder, B. P.
Format: Article
Language:English
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Summary:Hot carrier luminescence excited at low voltages across ultrathin gate oxides is used to describe the localized transport during progressive oxide breakdown. The emission identifies the locations of initial breakdown spots in field effect transistors. The transitions from stress-induced leakage currents to reversible breakdown to final breakdown are accompanied by changes in the efficiency of the emission showing an evolution from inelastic to elastic transport.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1759383