Gallium phosphide high-temperature electroluminescent p-n-p-n switches and controlled rectifiers

Electroluminescent gallium phosphide p-n-p-n switches (dynistors) and controlled rectifiers (thyristors) which are operable in the temperature range 0 ≤ T ≤ 500°C have been fabricated by diffusion of Zn into GaP n-p-n structures grown by liquid-phase epitaxy. Gallium phosphide thyristor forward and...

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Bibliographic Details
Published in:Journal of applied physics 1972-01, Vol.43 (8), p.3417-3421
Main Authors: Keune, D.L., Craford, M.G., Herzog, A.H., Fitzpatrick, B.J.
Format: Article
Language:English
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Summary:Electroluminescent gallium phosphide p-n-p-n switches (dynistors) and controlled rectifiers (thyristors) which are operable in the temperature range 0 ≤ T ≤ 500°C have been fabricated by diffusion of Zn into GaP n-p-n structures grown by liquid-phase epitaxy. Gallium phosphide thyristor forward and reverse blocking voltages as large as 280 and 80 V, respectively, have been observed. These thyristors can be switched to the low-impedance state by the application of < 5 A/cm2 gate current and exhibit holding current densities of ≈ 15 A/cm2 at a forward voltage of 2.2 V. Forward blocking voltages as large as 380 V at room temperature and 310 V at 415°C have been observed for GaP dynistors. When forward biased into the low-impedance state, these devices operate as high-brightness light emitters with room-temperature emission in the green portion of the spectrum.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1661730