Laser oscillation from Ho3+ and Nd3+ ions in epitaxially grown thin aluminum garnet films

Pulsed and continuous laser operation of the Ho3+ 5I7→5I8 transition at 2.1 μm has been obtained at 77°K by using Y1.25Ho0.1Er0.55Tm0.5Yb0.6 Al5O12 thin films grown on Y3Al5O12 substrates. Oscillation at the 1.06-μm 4F3/2→4I11/2 transition of Nd3+ has also been observed at 77 and 300°K from Y3Al5O12...

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Bibliographic Details
Published in:Applied physics letters 1973-06, Vol.22 (12), p.656-657
Main Authors: van der Ziel, J.P., Bonner, W.A., Kopf, L., Singh, S., Van Uitert, L.G.
Format: Article
Language:English
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Summary:Pulsed and continuous laser operation of the Ho3+ 5I7→5I8 transition at 2.1 μm has been obtained at 77°K by using Y1.25Ho0.1Er0.55Tm0.5Yb0.6 Al5O12 thin films grown on Y3Al5O12 substrates. Oscillation at the 1.06-μm 4F3/2→4I11/2 transition of Nd3+ has also been observed at 77 and 300°K from Y3Al5O12:Nd3+ films. The characteristics of these thin-film waveguide lasers are discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1654543