Growth-temperature-dependent (self-)annealing-induced blueshift of photoluminescence from 1.3 μm GaInNAs/GaAs quantum wells

Growing the capping layer of a GaInNAs/GaAs quantum well at typical substrate temperature for GaAs growth by molecular-beam epitaxy, like 580 °C, was found to induce a blueshift of the quantum-well emission whose magnitude significantly increased as the quantum-well growth temperature was decreased....

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Bibliographic Details
Published in:Applied physics letters 2003-08, Vol.83 (8), p.1497-1499
Main Authors: Pavelescu, E.-M., Jouhti, T., Dumitrescu, M., Klar, P. J., Karirinne, S., Fedorenko, Y., Pessa, M.
Format: Article
Language:English
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Summary:Growing the capping layer of a GaInNAs/GaAs quantum well at typical substrate temperature for GaAs growth by molecular-beam epitaxy, like 580 °C, was found to induce a blueshift of the quantum-well emission whose magnitude significantly increased as the quantum-well growth temperature was decreased. The growth-temperature-dependent (self-)annealing-induced blueshift is correlated with the presence of indium and occurs without observable changes in alloy macroscopic composition or quantum-well structure. The underlying cause for the increase in blue shift with decreasing quantum-well growth temperature appears to be an enhancement in the amount of In–N bonds formed by (self-)annealing, likely through a defect-assisted mechanism.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1601309