Role of aperiodic surface defects on the intensity of electron diffraction spots

A random distribution of two-dimensional gallium arsenide (GaAs) islands is found to effect the intensity of the electron diffraction pattern from the GaAs(001) surface. By utilizing the spontaneous island formation phenomenon as well as submonolayer deposition, the island coverage is systematically...

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Bibliographic Details
Published in:Applied physics letters 2003-04, Vol.82 (16), p.2586-2588
Main Authors: Bullock, D. W., Ding, Z., Thibado, P. M., LaBella, V. P.
Format: Article
Language:English
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Summary:A random distribution of two-dimensional gallium arsenide (GaAs) islands is found to effect the intensity of the electron diffraction pattern from the GaAs(001) surface. By utilizing the spontaneous island formation phenomenon as well as submonolayer deposition, the island coverage is systematically changed. It is found that the intensities of the one-, two-, and three-quarter-order diffraction spots of the [11̄0] azimuth decrease as the concentration of islands increases. In addition, only in the presence of islands, does the intensity of the half-order spot decrease as the grazing angle of the electron beam is decreased. A simple quantitative model is developed that provides insight into how an aperiodic arrangement of islands effects the electron diffraction patterns.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1568161