Temperature dependent exciton photoluminescence of bulk ZnO

Temperature dependent (4.2–300 K) photoluminescence (PL) of bulk (0001)-oriented ZnO in the range of free- and bound-exciton emission is presented. Emission from several bound excitons and the free A exciton were observed from the low temperature (20 K) PL spectrum. The temperature dependence of the...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2003-03, Vol.93 (6), p.3214-3217
Main Authors: Hamby, D. W., Lucca, D. A., Klopfstein, M. J., Cantwell, G.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Temperature dependent (4.2–300 K) photoluminescence (PL) of bulk (0001)-oriented ZnO in the range of free- and bound-exciton emission is presented. Emission from several bound excitons and the free A exciton were observed from the low temperature (20 K) PL spectrum. The temperature dependence of the free-exciton peak position was fit using the Manoogian-Woolley equation and the coefficients obtained show reasonable agreement both with first-principle theoretical calculations and empirical values of the coefficients for other II–VI semiconductors. The strongest bound-exciton line with a width (full width at half maximum) of about 1 meV exhibited a thermal activation energy of approximately 14 meV, consistent with the exciton-defect binding energy. It was not observed at temperatures above 150 K. Additional analysis of this particular bound-exciton peak suggests it dissociates into a free exciton and a neutral-donor-like defect-pair complex with increasing temperature.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1545157