AlN/AlGaInN superlattice light-emitting diodes at 280 nm

Ultraviolet light-emitting diodes operating at 280 nm, grown by gas source molecular-beam epitaxy with ammonia, are described. The device is composed of n- and p-type superlattices of AlN(1.2 nm thick)/AlGaInN(0.5 nm thick) doped with Si and Mg, respectively. With these superlattices, and despite th...

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Bibliographic Details
Published in:Journal of applied physics 2003-02, Vol.93 (3), p.1363-1366
Main Authors: Kipshidze, G., Kuryatkov, V., Zhu, K., Borisov, B., Holtz, M., Nikishin, S., Temkin, H.
Format: Article
Language:English
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Summary:Ultraviolet light-emitting diodes operating at 280 nm, grown by gas source molecular-beam epitaxy with ammonia, are described. The device is composed of n- and p-type superlattices of AlN(1.2 nm thick)/AlGaInN(0.5 nm thick) doped with Si and Mg, respectively. With these superlattices, and despite the high average Al content, we obtain hole concentrations of (0.7–1.1)×1018 cm−3, with the mobility of 3–4 cm2/V s and electron concentrations of 3×1019 cm−3, with the mobility of 10–20 cm2/V s, at room temperature. These carrier concentrations are sufficient to form effective p–n junctions needed in UV light sources.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1535255