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LiF/Al cathodes and the effect of LiF thickness on the device characteristics and built-in potential of polymer light-emitting diodes
We report the characteristics of a series of polymer light-emitting diodes, fabricated with LiF/Al cathodes and differing only by the thickness of the LiF interlayer (0 nm⩽d⩽11 nm). Electroabsorption studies of the internal electrostatic potential give direct evidence of a sizable reduction of the c...
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Published in: | Applied physics letters 2000-11, Vol.77 (19), p.3096-3098 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We report the characteristics of a series of polymer light-emitting diodes, fabricated with LiF/Al cathodes and differing only by the thickness of the LiF interlayer (0 nm⩽d⩽11 nm). Electroabsorption studies of the internal electrostatic potential give direct evidence of a sizable reduction of the cathodic barrier height brought about by the LiF films. These results also correlate with photoemission experiments [S. E. Shaheen, G. E. Jabbour, M. M. Morrell, Y. Kawabe, B. Kippelen, N. Peyghambarian, M. F. Nabor, R. Schlaf, E. A. Mash, and N. R. Armstrong, J. Appl. Phys. 84, 2324 (1998)] and with the electroluminescence performance of the diodes. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1323741 |